| PART |
Description |
Maker |
| HGTD6N40E1 HGTD6N50E1S HGTD6N40E1S HGTD6N50E1 |
6A/ 400V and 500V N-Channel IGBTs
6A 400V and 500V N-Channel IGBTs
6A, 400V and 500V N-Channel IGBTs 7.5 A, 500 V, N-CHANNEL IGBT, TO-252AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STB10NA40 STB10NA40-1 STB10NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-262VAR
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| OM6028SC OM6027SC OM6026SC OM6025SC OM6031SC OM603 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
400V Single N-Channel Hi-Rel MOSFET in a D3 package
500V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
1000V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
400V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22A I(D) | TO-259AA
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-258AA
1000V, N-Channel, 10Amp MOSFET, High Energy Capability(1000V , 10A,N沟道，MOS场效应管（高能容量）)
400V, N-Channel, 24Amp MOSFET, High Energy Capability(400V , 24A,N沟道，MOS场效应管（高能容量）)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 24A条（丁）|59AA
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 24A条（丁）|58AA
Isolated Hermetic Metal Package
|
International Rectifier
ETC
List of Unclassifed Manufacturers
Omnirel
Microsemi, Corp.
Wieland Electric, Inc.
|
| STP10NC50 STP10NC50FP |
N - CHANNEL 500V - 0.48Ohms - 10A - TO-220/TO-220FP PowerMESH MOSFET
N - CHANNEL 500V - 0.48ohm - 10A - TO-220/TO-220FP PowerMESH MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd.
ON Semiconductor
|
| STB10NC50 STB10NC50-1 STB10NC50T4 |
10 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET
N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| 2N6975 2N6978 2N6976 2N6977 |
5A/ 400V and 500V N-Channel IGBTs
5A 400V and 500V N-Channel IGBTs
5A, 400V and 500V N-Channel IGBTs
|
INTERSIL[Intersil Corporation]
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| IRF341IRF342 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs
|
Intersil
|
| FDPF12N50UT |
N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 10A, 800m
|
Fairchild Semiconductor
|
